铁电薄膜在红外辐射作用下的响应

研究了红外探测器中红外焦平面列阵的象元———铁电薄膜微桥在红外辐射作用下的输出信号。用层合板壳作为微桥结构的力学模型,中间一层为压电材料,上下两层为金属材料电极。采用了力-热-电耦合的控制方程和变分原理,推导出了基于Mindlin假设的压电材料层合板有限元公式。以红外探测器在夜间从飞机上探测地面的坦克为例,用有限单元法模拟了铁电薄膜微桥在红外辐射作用下的力、热、电输出信号,并对结果作了分析比较。     

An investigation into the spreading of a thin liquid drop under gravity on a slowly rotating disk

The axisymmetric spreading of a thin liquid drop under the influence of gravity and rotation is investigated. The effects of the Coriolis force and surface tension are ignored. The Lie group method is used to analyse the non-linear diffusion-convection equation modelling the spreading of the liquid drop under gravity and rotation. A stationary group invariant solution is obtained. The case when rotation is small is considered next. A straightforward perturbation approach is used to determine the effects of the small rotation on the solution given for spreading under gravity only. Over a short period of time no real difference is observed between the approximate solution and the solution for spreading under gravity only. After a long period of time, the approximate solution tends toward a dewetting solution. We find that the approximate solution is valid only in the interval t∈[0,t∗), where t∗ is the time when dewetting takes place. An approximation to t∗ is obtained.     

往复摩擦下热压镍－二硫化钼复合材料的自润滑性能及其耐磨机理研究

对于含ＭｏＳ２的复合材料在单向滑动摩擦条件下的实用性能，人们已经进行了比较多的研究，然而好多摩擦部件在工程实际中经受的却都是往复摩擦。为了探明热压Ｎｉ－ＭｏＳ２复合材料的自润滑性能及其耐磨机理，在往复摩擦条件下研究了这种材料盘表面和偶件ＧＣｒ１５钢球表面之ＭｏＳ２膜的形成过程与形貌特征，并且利用扫描电子显微镜等观察分析了ＭＯＳ２膜的磨损表面形貌及其微区成分。结果表明，在给定的往复摩擦条件下，对偶双方表面都形成了具有层状结构的ＭｏＳ２润滑膜，这种膜是通过疲劳剥落、转移、粘附与叠压等方式所形成；ＭｏＳ２含量对Ｎｉ－ＭｏＳ２复合材料自润滑性能的影响，主要取决于它是否能够在对偶双方表面形成分布均匀而稳定的润滑膜，含６０％（ｗｔ）ＭｏＳ２的复合材料的自润滑性能最好；Ｎｉ－ＭｏＳ２复合材料的自润滑性是通过其表面ＭｏＳ２膜的连续生成与疲劳剥落，并在偶件表面形成转移膜，使复合材料与金属间的摩擦变成复合材料表面ＭｏＳ２膜与偶件表面ＭｏＳ２膜之间的摩擦所实现。由此可见，Ｎｉ－ＭＯＳ２复合材料是适合在往复摩擦运动场合应用的一种性能良好的自润滑复合材料。     

Electrode metal penetration of amorphous indium gallium zinc oxide semiconductor thin film transistors

Penetration effects of various electrode materials, namely Al, Au, and Cu, on the physical and electrical characteristics of amorphous oxide semiconductor thin film transistors (TFTs) were investigated. Amorphous indium gallium zinc oxide (a-IGZO) TFTs were fabricated with conventional staggered bottom gate structures on a p-type Si substrate. X-ray photoemission spectroscopy (XPS) analysis under the electrode deposition area revealed variations in the oxygen bonding states and material compositions of the a-IGZO layer. Field-emission scanning electron microscopy (FE-SEM) with the line scan of energy dispersive spectroscopy (EDS) showed lateral penetration by the electrode metal. To compare the electrical characteristics of the tested TFTs, the initial current–voltage (I–V) transfer characteristics were examined. In addition, the tested TFTs fabricated using various electrode materials were tested under bias stress to verify the correlations between variations in TFT characteristics and both the metal work function and penetration-induced oxygen vacancies in the channel around the contact area.     

Surface characteristics and electrochemical behaviour of sputter-deposited NiTi thin film

Thin nanocrystalline amorphous NiTi film was deposited on Si substrate using DC magnetron sputtering. The as-deposited NiTi thin film was crystallized by heat treatment at 500 °C for 1 h. The crystal structure, surface morphology, microstructure and surface chemistry of the deposited films were studied using X-ray diffraction, atomic force microscopy, scanning electron microscopy and X-ray photoelectron spectroscopy (XPS), respectively. Corrosion behaviour was assessed in Ringer’s solution at 37 °C by open circuit potential (OCP), potentiodynamic polarization and electrochemical impedance spectroscopy as a function of exposure time. OCP values indicate that the tendency for the formation of a spontaneous oxide film is greater for the NiTi thin films than the bulk NiTi. Long time exposure to Ringer’s solution was found to have a great effect on the corrosion behaviour of the samples. Significantly low corrosion current density was obtained for the annealed NiTi film from the potentiodynamic polarization curves indicating a typical passive behaviour, but as-deposited film and bulk NiTi alloy exhibited breakdown of passivity at potentials approximately +1.4 V (vs. SCE). XPS showed that the oxide film formed on the annealed NiTi thin film mainly composed of Ti oxides, and no evidence of Ni was found up to 8.2 nm beneath the top surface, suggesting the excellent corrosion resistance of this sample in Ringer’s solution.     

辐射接枝法制备膨化聚四氟乙烯杂化膜及其抗菌性表征

通过共辐射接枝的方法,将聚丙烯酸成功接枝到膨化聚四氟乙烯薄膜上. 采用NaBH₄还原吸附在接枝链上的银离子,在膜中原位负载银纳米粒子,制备了抗菌性ePTFE杂化膜. 杂化膜的SEM、XPS、XRD和TGA表征结果表明,负载的银纳米粒子粒径为几十纳米至100 nm. 而银纳米粒子的负载量可由聚丙烯酸的接枝率控制. 细菌平板计数法测试结果证明,所制备的杂化膜具有优异的抗菌性,对大肠杆菌的抗菌率高达100%.     

Thickness effect on the band gap of magnetron sputtered Pb45Se45O10 thin films on Si

Oxygen doped PbSe thin films with different thickness were grown on the Si (100) substrates by magnetron sputtering, and characterized using scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and physical properties measurement system. As the film thickness increased, the intensity of the (200) PbSe prominent diffraction peak increased, while the (220) peak almost vanished, indicating the primary growth direction. The change rate between the light and dark resistance increased with the film thickness, and the maximum of 64.76% was obtained. According to the density functional theory calculations and the experimental results, the band gap of the PbSe thin films decreased from 0.278 eV to 0.21 eV when doped with oxygen. Doping with oxygen during the deposition process is a viable way to prepare PbSe thin films with a tunable band gap. The band gap increased almost linearly with the lattice constant, confirmed by the calculated and experimental results.     

The Thin Film Equation with Non-Zero Contact Angle: A Singular Perturbation Approach

In this paper we consider the thin film equation with prescribed non-zero contact angle condition for a large class of mobility coefficients, in dimension 1. We prove the global in time existence of weak solutions by using a diffuse approximation of the free boundary condition. This approach, which can be physically motivated by the introduction of singular disjoining/conjoining pressure forces had been suggested in particular by Bertsch et al. in [11 Bertsch , M. , Giacomelli , L. , Karali , G. ( 2005 ). Thin-film equations with “partial wetting” energy: Existence of weak solutions . Phys. D 209 : 17 – 27 .[Crossref], [Web of Science ®] , [Google Scholar]].     

Predicting Polymorphism of Electrospun Polyvinylidene Fluoride Membranes by Their Morphologies

Although electrospinning of polyvinylidene fluoride (PVDF) has been studied for more than 10 years, the crystalline phase differentiation of the electrospun mats is still normally through the combination of different characterization techniques, and the relationship between polymorphism and morphology of the fibers in electrospun PVDF membranes has never been reported. Here, we show their close relationships by conducting room-temperature electrospinning experiments on various polymer/solvent systems. The electrospun membranes full of bead-free fibers have a very high fraction of β-phase, F(β), over 90%, and high orientation, whereas the membranes comprising beads and/or a large number of beaded fibers most often result in a low fraction of β-phase (F(β) normally below 50%) and low orientation. On the other hand, electrospun membranes consisting of both bead-free fibers and a very limited number of beaded fibers showed a medium high fraction of β-phase, F(β) more than 70% but less than 90%. These findings suggest the feasibility of intuitively predicting the crystalline phase of electrospun PVDF membranes directly by their morphologies, which is obviously simple, inexpensive and convenient for future investigations.